IPD65R600C6BTMA1
ObsoleteInfineon Technologies
MOSFET N-CH 650V 7.3A TO252-3
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IPD65R600C6BTMA1
ObsoleteInfineon Technologies
MOSFET N-CH 650V 7.3A TO252-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD65R600C6BTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.3 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 63 W |
| Rds On (Max) @ Id, Vgs | 600 mOhm |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
IPD65R Series
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | FET Type | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 250 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3.5 V | PG-TO252-3 | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | 44 nC | 10 V | 208.3 W | 650 V | 16.1 A | 950 pF | Surface Mount | ||
Infineon Technologies | 600 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3.5 V | PG-TO252-3 | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | 10 V | 63 W | 650 V | 7.3 A | Surface Mount | 440 pF | 23 nC | ||
Infineon Technologies | 380 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3.5 V | PG-TO252-3 | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | 39 nC | 10 V | 83 W | 650 V | 10.6 A | Surface Mount | 710 pF | ||
Infineon Technologies | 600 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3.5 V | PG-TO252-3 | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | 10 V | 63 W | 650 V | 7.3 A | Surface Mount | 440 pF | 23 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPD65R Series
N-Channel 650 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Documents
Technical documentation and resources