IPD65R Series

Catalog

MOSFET N-CH 650V 16.1A TO252-3

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPD65R250C6XTMA1	250 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	3.5 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	44 nC	10 V	208.3 W	650 V	16.1 A	950 pF	Surface Mount
Infineon Technologies IPD65R600C6BTMA1	600 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	3.5 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V		10 V	63 W	650 V	7.3 A		Surface Mount	440 pF	23 nC
Infineon Technologies IPD65R380C6BTMA1	380 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	3.5 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	39 nC	10 V	83 W	650 V	10.6 A		Surface Mount	710 pF
Infineon Technologies IPD65R600E6BTMA1	600 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	3.5 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V		10 V	63 W	650 V	7.3 A		Surface Mount	440 pF	23 nC