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IPW60R099CPFKSA1 - STMICROELECTRONICS STW3N150

IPW60R099CPFKSA1

NRND
Infineon Technologies

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM;

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IPW60R099CPFKSA1 - STMICROELECTRONICS STW3N150

IPW60R099CPFKSA1

NRND
Infineon Technologies

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R099CPFKSA1
Current - Continuous Drain (Id) @ 25°C31 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC
Input Capacitance (Ciss) (Max) @ Vds2800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)255 W
Rds On (Max) @ Id, Vgs99 mOhm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 3.78
DigikeyTube 1$ 9.83
10$ 6.77
100$ 5.04
500$ 4.64
NewarkEach 1$ 7.51
10$ 6.93
25$ 5.02
50$ 4.63
100$ 4.23
480$ 4.22
720$ 3.87

Description

General part information

IPW60R099 Series

The IPW60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

Documents

Technical documentation and resources