IPW60R099 Series

Catalog

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM; HIGHEST PERFORMANCE

Part	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Power Dissipation (Max)	Grade	Qualification	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPW60R099C7XKSA1	MOSFET (Metal Oxide)	99 mOhm	14 A	10 V	20 V	42 nC	1819 pF	4 V	Through Hole	-55 °C	150 °C	PG-TO247-3	TO-247-3	600 V	110 W	N-Channel
Infineon Technologies IPW60R099CPFKSA1	MOSFET (Metal Oxide)	99 mOhm	31 A	10 V	20 V	80 nC	2800 pF	3.5 V	Through Hole	-55 °C	150 °C	PG-TO247-3-1	TO-247-3	650 V		N-Channel	255 W
Infineon Technologies IPW60R099CPAFKSA1	MOSFET (Metal Oxide)		31 A	10 V	20 V	80 nC	2800 pF	3.5 V	Through Hole	-40 °C	150 °C	PG-TO247-3	TO-247-3	600 V		N-Channel	255 W	Automotive	AEC-Q101	105 mOhm