
IPW60R099CPAFKSA1
ActiveInfineon Technologies
MOSFET, AEC-Q101, N-CH, 600V, 31A, 255W ROHS COMPLIANT: YES
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IPW60R099CPAFKSA1
ActiveInfineon Technologies
MOSFET, AEC-Q101, N-CH, 600V, 31A, 255W ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPW60R099CPAFKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 255 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 105 mOhm |
| Supplier Device Package | PG-TO247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPW60R099 Series
N-Channel 600 V 31A (Tc) 255W (Tc) Through Hole PG-TO247-3
Documents
Technical documentation and resources