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IPD068N10N3GATMA1 - TO252-3

IPD068N10N3GATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 6.8 MOHM;

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Search across all available documentation for this part.

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IPD068N10N3GATMA1 - TO252-3

IPD068N10N3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 6.8 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD068N10N3GATMA1
Current - Continuous Drain (Id) @ 25°C90 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]68 nC
Input Capacitance (Ciss) (Max) @ Vds4910 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs6.8 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.15
10$ 1.40
100$ 0.97
500$ 0.93
Digi-Reel® 1$ 2.15
10$ 1.40
100$ 0.97
500$ 0.93
Tape & Reel (TR) 2500$ 0.93
NewarkEach (Supplied on Full Reel) 2500$ 0.88

Description

General part information

IPD068 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources