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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 6.8 MOHM;
| Part | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Supplier Device Package | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] [custom] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 100 V | 6 V 10 V | MOSFET (Metal Oxide) | Surface Mount | 4910 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3.5 V | 68 nC | 90 A | 20 V | -55 °C | 175 ░C | 6.8 mOhm | N-Channel | PG-TO252-3 | 150 W | ||
Infineon Technologies | 30 V | 4.5 V 10 V | MOSFET (Metal Oxide) | Surface Mount | 7720 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2 V | 70 A | 20 V | -55 °C | 175 ░C | 6.8 mOhm | P-Channel | PG-TO252-3 | 91 nC | 100 W |