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IPD068P03L3GATMA1 - TO252-3

IPD068P03L3GATMA1

Active
Infineon Technologies

THE HIGHLY INNOVATIVE OPTIMOS™ FAMILIES INCLUDE P-CHANNEL POWER MOSFETS, LIKE IPD068P03L3 G, WHICH CONSISTENTLY MEET THE HIGHEST QUALITY AND PERFORMANCE NEEDS.

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IPD068P03L3GATMA1 - TO252-3

IPD068P03L3GATMA1

Active
Infineon Technologies

THE HIGHLY INNOVATIVE OPTIMOS™ FAMILIES INCLUDE P-CHANNEL POWER MOSFETS, LIKE IPD068P03L3 G, WHICH CONSISTENTLY MEET THE HIGHEST QUALITY AND PERFORMANCE NEEDS.

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD068P03L3GATMA1
Current - Continuous Drain (Id) @ 25°C70 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]91 nC
Input Capacitance (Ciss) (Max) @ Vds7720 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]100 W
Rds On (Max) @ Id, Vgs6.8 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.14
10$ 0.93
100$ 0.73
500$ 0.61
1000$ 0.50
Digi-Reel® 1$ 1.14
10$ 0.93
100$ 0.73
500$ 0.61
1000$ 0.50
Tape & Reel (TR) 2500$ 0.47
5000$ 0.45
12500$ 0.43
NewarkEach (Supplied on Cut Tape) 1$ 1.28
10$ 0.87
25$ 0.78
50$ 0.69
100$ 0.60
250$ 0.55
500$ 0.49
1000$ 0.45

Description

General part information

IPD068 Series

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Documents

Technical documentation and resources