IPB12CN10N G

Obsolete

Infineon Technologies

MOSFET N-CH 100V 67A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 67A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB12CN10N G

Current - Continuous Drain (Id) @ 25°C	67 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	4320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs [Max]	12.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPB12CN10NGATMA2
Infineon Technologies IPB12CN10N G	125 W	12.6 mOhm	MOSFET (Metal Oxide)	65 nC	20 V	100 V	N-Channel	10 V	4320 pF	4 V	Surface Mount	67 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources

No documents available