IPB12CN10NGATMA2

Obsolete

Infineon Technologies

MOSFET N-CH 100V 67A TO263-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 100V 67A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB12CN10NGATMA2

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Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPB12CN10NGATMA2
Infineon Technologies IPB12CN10N G	125 W	12.6 mOhm	MOSFET (Metal Oxide)	65 nC	20 V	100 V	N-Channel	10 V	4320 pF	4 V	Surface Mount	67 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFET N-CH 100V 67A TO263-3

Technical documentation and resources

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