Beta
⌘K
MOSFET N-CH 100V 67A TO263-3
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | |||||||||||||||
Infineon Technologies | 125 W | 12.6 mOhm | MOSFET (Metal Oxide) | 65 nC | 20 V | 100 V | N-Channel | 10 V | 4320 pF | 4 V | Surface Mount | 67 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 175 ░C |