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6116LA25TBD

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IDT, Integrated Device Technology Inc

IC SRAM 16KBIT PARALLEL 24CDIP

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6116LA25TBD

Active
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT PARALLEL 24CDIP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification6116LA25TBD6116LA Series
Access Time25 ns15 - 90 ns
Memory FormatSRAMSRAM
Memory InterfaceParallelParallel
Memory Organization2K x 82K x 8
Memory Size16 Kbit16 Kbit
Memory TypeVolatileVolatile
Mounting TypeThrough HoleSurface Mount, Through Hole
Operating Temperature-70 °C
Operating Temperature-0 °C
Operating Temperature [Max]125 °C125 °C
Operating Temperature [Min]-55 °C-55 °C
Package / Case24-CDIP24-SOIC, 24-CDIP
Package / Case-7.5 mm
Package / Case-0.295 in
Package / Case-15.24 mm
Package / Case-0.6 in
Supplier Device Package24-CDIP24-SOIC, 24-CDIP
TechnologySRAM - AsynchronousSRAM - Asynchronous
Voltage - Supply [Max]5.5 V5.5 V
Voltage - Supply [Min]4.5 V4.5 V
Write Cycle Time - Word, Page25 ns15 - 90 ns
Write Cycle Time - Word, Page-45 ns
Write Cycle Time - Word, Page-45 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 28$ 13.00

6116LA Series

IC SRAM 16KBIT PARALLEL 24SOIC

PartVoltage - Supply [Min]Voltage - Supply [Max]Package / Case [custom]Package / CasePackage / Case [custom]Memory TypeMemory OrganizationSupplier Device PackageAccess TimeMemory FormatMounting TypeWrite Cycle Time - Word, PageMemory SizeTechnologyOperating Temperature [Max]Operating Temperature [Min]Memory InterfaceOperating Temperature [Max]Operating Temperature [Min]Package / CasePackage / CaseWrite Cycle Time - Word, Page [custom]Write Cycle Time - Word, Page [custom]
IDT, Integrated Device Technology Inc
6116LA20SO
4.5 V
5.5 V
7.5 mm
24-SOIC
0.295 in
Volatile
2K x 8
24-SOIC
20 ns
SRAM
Surface Mount
20 ns
16 Kbit
SRAM - Asynchronous
70 °C
0 °C
Parallel
IDT, Integrated Device Technology Inc
6116LA70TDB
4.5 V
5.5 V
24-CDIP
Volatile
2K x 8
24-CDIP
70 ns
SRAM
Through Hole
16 Kbit
SRAM - Asynchronous
Parallel
125 °C
-55 °C
IDT, Integrated Device Technology Inc
6116LA90TDB
4.5 V
5.5 V
24-CDIP
Volatile
2K x 8
24-CDIP
90 ns
SRAM
Through Hole
90 ns
16 Kbit
SRAM - Asynchronous
Parallel
125 °C
-55 °C
IDT, Integrated Device Technology Inc
6116LA35SO
4.5 V
5.5 V
7.5 mm
24-SOIC
0.295 in
Volatile
2K x 8
24-SOIC
35 ns
SRAM
Surface Mount
35 ns
16 Kbit
SRAM - Asynchronous
70 °C
0 °C
Parallel
IDT, Integrated Device Technology Inc
6116LA45DB
4.5 V
5.5 V
24-CDIP
Volatile
2K x 8
24-CDIP
45 ns
SRAM
Through Hole
16 Kbit
SRAM - Asynchronous
Parallel
125 °C
-55 °C
15.24 mm
0.6 in
45 ns
45 ns
IDT, Integrated Device Technology Inc
6116LA15SOG
4.5 V
5.5 V
7.5 mm
24-SOIC
0.295 in
Volatile
2K x 8
24-SOIC
15 ns
SRAM
Surface Mount
15 ns
16 Kbit
SRAM - Asynchronous
70 °C
0 °C
Parallel
IDT, Integrated Device Technology Inc
6116LA25TBD
4.5 V
5.5 V
24-CDIP
Volatile
2K x 8
24-CDIP
25 ns
SRAM
Through Hole
25 ns
16 Kbit
SRAM - Asynchronous
Parallel
125 °C
-55 °C

Description

General part information

6116LA Series

SRAM - Asynchronous Memory IC 16Kbit Parallel 25 ns 24-CDIP

Documents

Technical documentation and resources

No documents available