6116LA Series
Manufacturer: IDT, Integrated Device Technology Inc
Catalog
IC SRAM 16KBIT PARALLEL 24SOIC
Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case [custom] | Package / Case | Package / Case [custom] | Memory Type | Memory Organization | Supplier Device Package | Access Time | Memory Format | Mounting Type | Write Cycle Time - Word, Page | Memory Size | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDT, Integrated Device Technology Inc 6116LA20SO | 4.5 V | 5.5 V | 7.5 mm | 24-SOIC | 0.295 in | Volatile | 2K x 8 | 24-SOIC | 20 ns | SRAM | Surface Mount | 20 ns | 16 Kbit | SRAM - Asynchronous | 70 °C | 0 °C | Parallel | ||||||
IDT, Integrated Device Technology Inc 6116LA70TDB | 4.5 V | 5.5 V | 24-CDIP | Volatile | 2K x 8 | 24-CDIP | 70 ns | SRAM | Through Hole | 16 Kbit | SRAM - Asynchronous | Parallel | 125 °C | -55 °C | |||||||||
IDT, Integrated Device Technology Inc 6116LA90TDB | 4.5 V | 5.5 V | 24-CDIP | Volatile | 2K x 8 | 24-CDIP | 90 ns | SRAM | Through Hole | 90 ns | 16 Kbit | SRAM - Asynchronous | Parallel | 125 °C | -55 °C | ||||||||
IDT, Integrated Device Technology Inc 6116LA35SO | 4.5 V | 5.5 V | 7.5 mm | 24-SOIC | 0.295 in | Volatile | 2K x 8 | 24-SOIC | 35 ns | SRAM | Surface Mount | 35 ns | 16 Kbit | SRAM - Asynchronous | 70 °C | 0 °C | Parallel | ||||||
IDT, Integrated Device Technology Inc 6116LA45DB | 4.5 V | 5.5 V | 24-CDIP | Volatile | 2K x 8 | 24-CDIP | 45 ns | SRAM | Through Hole | 16 Kbit | SRAM - Asynchronous | Parallel | 125 °C | -55 °C | 15.24 mm | 0.6 in | 45 ns | 45 ns | |||||
IDT, Integrated Device Technology Inc 6116LA15SOG | 4.5 V | 5.5 V | 7.5 mm | 24-SOIC | 0.295 in | Volatile | 2K x 8 | 24-SOIC | 15 ns | SRAM | Surface Mount | 15 ns | 16 Kbit | SRAM - Asynchronous | 70 °C | 0 °C | Parallel | ||||||
IDT, Integrated Device Technology Inc 6116LA25TBD | 4.5 V | 5.5 V | 24-CDIP | Volatile | 2K x 8 | 24-CDIP | 25 ns | SRAM | Through Hole | 25 ns | 16 Kbit | SRAM - Asynchronous | Parallel | 125 °C | -55 °C |