6116LA90TDB

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IDT, Integrated Device Technology Inc

IC SRAM 16KBIT PARALLEL 24CDIP

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6116LA90TDB

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IDT, Integrated Device Technology Inc

IC SRAM 16KBIT PARALLEL 24CDIP

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	6116LA90TDB	6116LA Series

Access Time	90 ns	15 - 90 ns
Memory Format	SRAM	SRAM
Memory Interface	Parallel	Parallel
Memory Organization	2K x 8	2K x 8
Memory Size	16 Kbit	16 Kbit
Memory Type	Volatile	Volatile
Mounting Type	Through Hole	Surface Mount, Through Hole
Operating Temperature	-	70 °C
Operating Temperature	-	0 °C
Operating Temperature [Max]	125 °C	125 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	24-CDIP	24-SOIC, 24-CDIP
Package / Case	-	7.5 mm
Package / Case	-	0.295 in
Package / Case	-	15.24 mm
Package / Case	-	0.6 in
Supplier Device Package	24-CDIP	24-SOIC, 24-CDIP
Technology	SRAM - Asynchronous	SRAM - Asynchronous
Voltage - Supply [Max]	5.5 V	5.5 V
Voltage - Supply [Min]	4.5 V	4.5 V
Write Cycle Time - Word, Page	90 ns	15 - 90 ns
Write Cycle Time - Word, Page	-	45 ns
Write Cycle Time - Word, Page	-	45 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	16	$ 18.93

6116LA Series

IC SRAM 16KBIT PARALLEL 24SOIC

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case [custom]	Package / Case	Package / Case [custom]	Memory Type	Memory Organization	Supplier Device Package	Access Time	Memory Format	Mounting Type	Write Cycle Time - Word, Page	Memory Size	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Memory Interface	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
IDT, Integrated Device Technology Inc 6116LA20SO	4.5 V	5.5 V	7.5 mm	24-SOIC	0.295 in	Volatile	2K x 8	24-SOIC	20 ns	SRAM	Surface Mount	20 ns	16 Kbit	SRAM - Asynchronous	70 °C	0 °C	Parallel
IDT, Integrated Device Technology Inc 6116LA70TDB	4.5 V	5.5 V		24-CDIP		Volatile	2K x 8	24-CDIP	70 ns	SRAM	Through Hole		16 Kbit	SRAM - Asynchronous			Parallel	125 °C	-55 °C
IDT, Integrated Device Technology Inc 6116LA90TDB	4.5 V	5.5 V		24-CDIP		Volatile	2K x 8	24-CDIP	90 ns	SRAM	Through Hole	90 ns	16 Kbit	SRAM - Asynchronous			Parallel	125 °C	-55 °C
IDT, Integrated Device Technology Inc 6116LA35SO	4.5 V	5.5 V	7.5 mm	24-SOIC	0.295 in	Volatile	2K x 8	24-SOIC	35 ns	SRAM	Surface Mount	35 ns	16 Kbit	SRAM - Asynchronous	70 °C	0 °C	Parallel
IDT, Integrated Device Technology Inc 6116LA45DB	4.5 V	5.5 V		24-CDIP		Volatile	2K x 8	24-CDIP	45 ns	SRAM	Through Hole		16 Kbit	SRAM - Asynchronous			Parallel	125 °C	-55 °C	15.24 mm	0.6 in	45 ns	45 ns
IDT, Integrated Device Technology Inc 6116LA15SOG	4.5 V	5.5 V	7.5 mm	24-SOIC	0.295 in	Volatile	2K x 8	24-SOIC	15 ns	SRAM	Surface Mount	15 ns	16 Kbit	SRAM - Asynchronous	70 °C	0 °C	Parallel
IDT, Integrated Device Technology Inc 6116LA25TBD	4.5 V	5.5 V		24-CDIP		Volatile	2K x 8	24-CDIP	25 ns	SRAM	Through Hole	25 ns	16 Kbit	SRAM - Asynchronous			Parallel	125 °C	-55 °C

Description

General part information

6116LA Series

SRAM - Asynchronous Memory IC 16Kbit Parallel 90 ns 24-CDIP

Documents

Technical documentation and resources

No documents available