DMP2070UCB6-7

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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DMP2070UCB6-7

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2070UCB6-7

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.9 nC
Input Capacitance (Ciss) (Max) @ Vds	210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	920 mW
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	U-WLB1510-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

DMP2070UCB6 Series

NRND = Not Recommended for New Design

Part	Vgs (Max)	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	FET Type	Qualification	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMP2070UQ-13	8 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	44 mOhm	8.2 nC	20 V	950 mV	-55 °C	150 °C	1.8 V 4.5 V	4.6 A	SOT-23-3	830 mW	P-Channel	AEC-Q101	Surface Mount	118 pF	Automotive
Diodes Inc DMP2070UCB6-7	8 V	MOSFET (Metal Oxide)		70 mOhm		20 V	1 V	-55 °C	150 °C	1.5 V 4.5 V	2.5 A	U-WLB1510-6	920 mW	P-Channel		Surface Mount	210 pF		2.9 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DMP2070UCB6 Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.