DMP2070UCB6 Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Vgs (Max)	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	FET Type	Qualification	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMP2070UQ-13	8 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	44 mOhm	8.2 nC	20 V	950 mV	-55 °C	150 °C	1.8 V 4.5 V	4.6 A	SOT-23-3	830 mW	P-Channel	AEC-Q101	Surface Mount	118 pF	Automotive
Diodes Inc DMP2070UCB6-7	8 V	MOSFET (Metal Oxide)		70 mOhm		20 V	1 V	-55 °C	150 °C	1.5 V 4.5 V	2.5 A	U-WLB1510-6	920 mW	P-Channel		Surface Mount	210 pF		2.9 nC

Catalog

NRND = Not Recommended for New Design

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMP2070UQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.