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DMP2070UQ-13 - SOT-23-3

DMP2070UQ-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2070UQ-13 - SOT-23-3

DMP2070UQ-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP2070UQ-13
Current - Continuous Drain (Id) @ 25°C4.6 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds118 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)830 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs44 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.09
20000$ 0.08
30000$ 0.08
50000$ 0.07
70000$ 0.07

Description

General part information

DMP2070UCB6 Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.