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ZXMN6A25N8TA - 8 SO

ZXMN6A25N8TA

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Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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ZXMN6A25N8TA - 8 SO

ZXMN6A25N8TA

Active
Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN6A25N8TA
Current - Continuous Drain (Id) @ 25°C4.3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.4 nC
Input Capacitance (Ciss) (Max) @ Vds1063 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)1.56 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 500$ 0.54
1000$ 0.50
1500$ 0.47
2500$ 0.44
3500$ 0.43
5000$ 0.41
12500$ 0.41

Description

General part information

ZXMN6A25N8 Series

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.