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ZXMN6A09DN8TC - 8 SO

ZXMN6A09DN8TC

Obsolete
Diodes Inc

MOSFET 2N-CH 60V 4.3A 8SO

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ZXMN6A09DN8TC - 8 SO

ZXMN6A09DN8TC

Obsolete
Diodes Inc

MOSFET 2N-CH 60V 4.3A 8SO

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN6A09DN8TC
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C4.3 A
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs24.2 nC
Input Capacitance (Ciss) (Max) @ Vds1407 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]1.25 W
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

ZXMN6A25N8 Series

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.

Documents

Technical documentation and resources

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