
ZXMN6A09DN8TC
ObsoleteDiodes Inc
MOSFET 2N-CH 60V 4.3A 8SO
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ZXMN6A09DN8TC
ObsoleteDiodes Inc
MOSFET 2N-CH 60V 4.3A 8SO
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMN6A09DN8TC |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 4.3 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 24.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1407 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1.25 W |
| Rds On (Max) @ Id, Vgs | 40 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
ZXMN6A25N8 Series
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
Documents
Technical documentation and resources
No documents available