ZXMN6A08GTA

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3.8A I(D), 60V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, TO-261AA, 4 PIN

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ZXMN6A08GTA

Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3.8A I(D), 60V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, TO-261AA, 4 PIN

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMN6A08GTA

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.8 nC
Input Capacitance (Ciss) (Max) @ Vds	459 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

ZXMN6A25N8 Series

60V SOT223 N-Channel enhancement mode MOSFET

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Feature	Power - Max [Max]	Configuration	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification
Diodes Inc ZXMN6A25KTC	Surface Mount	4.5 V 10 V	N-Channel	20.4 nC	20 V	TO-252-3	7 A	60 V	1063 pF	MOSFET (Metal Oxide)	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	50 mOhm	2.11 W
Diodes Inc ZXMN6A09DN8TC	Surface Mount			24.2 nC		8-SO	4.3 A	60 V	1407 pF	MOSFET (Metal Oxide)	3 V	8-SOIC	-55 °C	150 °C	40 mOhm		Logic Level Gate	1.25 W	2 N-Channel (Dual)	3.9 mm	0.154 in
Diodes Inc ZXMN6A11ZTA	Surface Mount	4.5 V 10 V	N-Channel	5.7 nC	20 V	SOT-89-3	2.7 A	60 V		MOSFET (Metal Oxide)	1 V	TO-243AA	-55 °C	150 °C	120 mOhm	1.5 W						330 pF
Diodes Inc ZXMN6A11GTA	Surface Mount	4.5 V 10 V	N-Channel	5.7 nC	20 V	SOT-223-3		60 V		MOSFET (Metal Oxide)	3 V	TO-261-4 TO-261AA	-55 °C	150 °C	120 mOhm							330 pF	2 W
Diodes Inc ZXMN6A08GTA	Surface Mount	4.5 V 10 V	N-Channel	5.8 nC	20 V	SOT-223-3	3.8 A	60 V	459 pF	MOSFET (Metal Oxide)	1 V	TO-261-4 TO-261AA	-55 °C	150 °C	80 mOhm								2 W
Diodes Inc ZXMN6A09KTC	Surface Mount	4.5 V 10 V	N-Channel	29 nC	20 V	TO-252-3	7.7 A	60 V	1426 pF	MOSFET (Metal Oxide)	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	40 mOhm	2.15 W
Diodes Inc ZXMN6A07FTC	Surface Mount	4.5 V 10 V	N-Channel	3.2 nC	20 V	SOT-23-3	1.2 A	60 V	166 pF	MOSFET (Metal Oxide)	3 V	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	250 mOhm								625 mW
Diodes Inc ZXMN6A11DN8TC	Surface Mount					8-SO		60 V	330 pF	MOSFET (Metal Oxide)	1 V	8-SOIC	-55 °C	150 °C	120 mOhm		Logic Level Gate	1.8 W	2 N-Channel (Dual)	3.9 mm	0.154 in			5.7 nC
Diodes Inc ZXMN6A08GQTC	Surface Mount	4.5 V 10 V	N-Channel	5.8 nC	20 V	SOT-223-3	3.8 A	60 V	459 pF	MOSFET (Metal Oxide)	1 V	TO-261-4 TO-261AA	-55 °C	150 °C	80 mOhm								2 W		Automotive	AEC-Q101
Diodes Inc ZXMN6A25N8TA	Surface Mount	4.5 V 10 V	N-Channel	20.4 nC	20 V	8-SO	4.3 A	60 V	1063 pF	MOSFET (Metal Oxide)	3 V	8-SOIC	-55 °C	150 °C	50 mOhm	1.56 W				3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.63
		10	$ 0.55
		100	$ 0.38
		500	$ 0.32
	Digi-Reel®	1	$ 0.63
		10	$ 0.55
		100	$ 0.38
		500	$ 0.32
	Tape & Reel (TR)	1000	$ 0.27
		2000	$ 0.24
		5000	$ 0.23
		10000	$ 0.21

Description

General part information

ZXMN6A25N8 Series

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.

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