IPP65R420CFDXKSA2

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Infineon Technologies

MOSFET N-CH 650V 8.7A TO220-3

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Infineon Technologies

MOSFET N-CH 650V 8.7A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R420CFDXKSA2

Current - Continuous Drain (Id) @ 25°C	8.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31.5 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	83.3 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Infineon Technologies IPP65R420CFDXKSA1	N-Channel	32 nC	10 V	20 V	870 pF	TO-220-3	420 mOhm	83.3 W	4.5 V	MOSFET (Metal Oxide)	PG-TO220-3	-55 °C	150 °C	650 V	8.7 A	Through Hole
Infineon Technologies IPP65R420CFDXKSA2	N-Channel	31.5 nC	10 V	20 V	870 pF	TO-220-3	420 mOhm	83.3 W	4.5 V	MOSFET (Metal Oxide)	PG-TO220-3	-55 °C	150 °C	650 V	8.7 A	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO220-3

Technical documentation and resources