IPP65R420CFDXKSA1

Obsolete

Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 420 MOHM; FAST RECOVERY DIODE

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IPP65R420CFDXKSA1

Obsolete

Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 420 MOHM; FAST RECOVERY DIODE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R420CFDXKSA1

Current - Continuous Drain (Id) @ 25°C	8.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	83.3 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPP65R420 Series

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Infineon Technologies IPP65R420CFDXKSA1	N-Channel	32 nC	10 V	20 V	870 pF	TO-220-3	420 mOhm	83.3 W	4.5 V	MOSFET (Metal Oxide)	PG-TO220-3	-55 °C	150 °C	650 V	8.7 A	Through Hole
Infineon Technologies IPP65R420CFDXKSA2	N-Channel	31.5 nC	10 V	20 V	870 pF	TO-220-3	420 mOhm	83.3 W	4.5 V	MOSFET (Metal Oxide)	PG-TO220-3	-55 °C	150 °C	650 V	8.7 A	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPP65R420 Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Documents

Technical documentation and resources