Beta
⌘K
COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 420 MOHM; FAST RECOVERY DIODE
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 32 nC | 10 V | 20 V | 870 pF | TO-220-3 | 420 mOhm | 83.3 W | 4.5 V | MOSFET (Metal Oxide) | PG-TO220-3 | -55 °C | 150 °C | 650 V | 8.7 A | Through Hole |
Infineon Technologies | N-Channel | 31.5 nC | 10 V | 20 V | 870 pF | TO-220-3 | 420 mOhm | 83.3 W | 4.5 V | MOSFET (Metal Oxide) | PG-TO220-3 | -55 °C | 150 °C | 650 V | 8.7 A | Through Hole |