
DMP3165SVT-7
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
Search across all available documentation for this part.

DMP3165SVT-7
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP3165SVT-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.7 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 287 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Rds On (Max) @ Id, Vgs | 95 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMP3165SVT Series
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources