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DMP3165SVT-7 - TSOT-26

DMP3165SVT-7

Obsolete
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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DMP3165SVT-7 - TSOT-26

DMP3165SVT-7

Obsolete
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3165SVT-7
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)3.3 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]6.8 nC
Input Capacitance (Ciss) (Max) @ Vds287 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs95 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

DMP3165SVT Series

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.