
DMP3165LQ-13
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
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DMP3165LQ-13
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP3165LQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.3 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 90 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.1 V |
DMP3165SVT Series
NRND = Not Recommended for New Design
| Part | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Supplier Device Package | Qualification | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Grade | Gate Charge (Qg) (Max) @ Vgs | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | 20 V | 3.3 A | SC-59 SOT-23-3 TO-236-3 | 30 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | SOT-23-3 | AEC-Q101 | 2.1 V | 300 pF | 4.5 V 10 V | 90 mOhm | Automotive | 2 nC | P-Channel | |||||
Diodes Inc | Surface Mount | 20 V | 2.7 A | SOT-23-6 Thin TSOT-23-6 | 30 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3.3 V | P-Channel | 287 pF | 10 V | 2.2 V | 95 mOhm | 6.8 nC | |||||||
Diodes Inc | Surface Mount | 20 V | 3.3 A | SC-59 SOT-23-3 TO-236-3 | 30 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | SOT-23-3 | 2.1 V | 300 pF | 4.5 V 10 V | 90 mOhm | 2 nC | P-Channel |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.07 | |
| 20000 | $ 0.06 | |||
| 30000 | $ 0.06 | |||
| 50000 | $ 0.06 | |||
| 70000 | $ 0.06 | |||
| 100000 | $ 0.06 | |||
Description
General part information
DMP3165SVT Series
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources