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DMP3165L-7 - SOT-23-3

DMP3165L-7

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3165L-7 - SOT-23-3

DMP3165L-7

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3165L-7
Current - Continuous Drain (Id) @ 25°C3.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs [Max]90 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.25
100$ 0.13
500$ 0.11
1000$ 0.09
Digi-Reel® 1$ 0.36
10$ 0.25
100$ 0.13
500$ 0.11
1000$ 0.09
Tape & Reel (TR) 3000$ 0.08
6000$ 0.08
9000$ 0.07
30000$ 0.07
75000$ 0.06
150000$ 0.06

Description

General part information

DMP3165SVT Series

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.