IR2127SPBF

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Infineon Technologies

MOSFET DRIVER SINGLE, HIGH SIDE, 10V-20V SUPPLY, 500MA PEAK OUT, 125 OHM OUTPUT, SOIC-8

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IR2127SPBF

Active

Infineon Technologies

MOSFET DRIVER SINGLE, HIGH SIDE, 10V-20V SUPPLY, 500MA PEAK OUT, 125 OHM OUTPUT, SOIC-8

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2127SPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	12 V

IR2127 Series

Part	Logic Voltage - VIL, VIH	Voltage - Supply [Min]	Voltage - Supply [Max]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Max]	Operating Temperature [Min]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Input Type	Supplier Device Package	Package / Case	Package / Case
Infineon Technologies IR2127STRPBF	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	High-Side Low-Side	600 V	Surface Mount	Non-Inverting	8-SOIC
Infineon Technologies IR2127	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-DIP			150 °C	-40 °C	High-Side Low-Side	600 V	Through Hole	Non-Inverting	8-PDIP	0.3 in	7.62 mm
Infineon Technologies IR2127PBF	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-DIP			150 °C	-40 °C	High-Side Low-Side	600 V	Through Hole	Non-Inverting	8-PDIP	0.3 in	7.62 mm
Infineon Technologies IR2127STR	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	High-Side Low-Side	600 V	Surface Mount	Non-Inverting	8-SOIC
Infineon Technologies IR2127SPBF	0.8 V 3 V	12 V	20 V	IGBT MOSFET N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	High-Side Low-Side	600 V	Surface Mount	Non-Inverting	8-SOIC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.09
		10	$ 1.55
		95	$ 1.28
		190	$ 1.22
		285	$ 1.19
		570	$ 1.16
		1045	$ 1.36
		2565	$ 1.26
		5035	$ 1.22
Newark	Each	1	$ 2.64
		25	$ 2.24
		100	$ 1.80
		500	$ 1.67
		1000	$ 1.08
		2500	$ 1.07
		5000	$ 1.07
		10000	$ 1.05

Description

General part information

IR2127 Series

The IR2127SPBF is a single-channel current sensing high voltage high speed power MOSFET and IGBT Driver with the proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuitry detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600V.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet