IR2127 Series

Catalog

THE IR2127S IS A 600 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING (8 LEAD SOIC PACKAGE)

Part	Logic Voltage - VIL, VIH	Voltage - Supply [Min]	Voltage - Supply [Max]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Max]	Operating Temperature [Min]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Input Type	Supplier Device Package	Package / Case	Package / Case
Infineon Technologies IR2127STRPBF	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	High-Side Low-Side	600 V	Surface Mount	Non-Inverting	8-SOIC
Infineon Technologies IR2127	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-DIP			150 °C	-40 °C	High-Side Low-Side	600 V	Through Hole	Non-Inverting	8-PDIP	0.3 in	7.62 mm
Infineon Technologies IR2127PBF	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-DIP			150 °C	-40 °C	High-Side Low-Side	600 V	Through Hole	Non-Inverting	8-PDIP	0.3 in	7.62 mm
Infineon Technologies IR2127STR	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	High-Side Low-Side	600 V	Surface Mount	Non-Inverting	8-SOIC
Infineon Technologies IR2127SPBF	0.8 V 3 V	12 V	20 V	IGBT MOSFET N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	High-Side Low-Side	600 V	Surface Mount	Non-Inverting	8-SOIC