IR2127STRPBF

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Infineon Technologies

THE IR2127S IS A 600 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING (8 LEAD SOIC PACKAGE)

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Infineon Technologies

THE IR2127S IS A 600 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING (8 LEAD SOIC PACKAGE)

Technical Specifications

Parameters and characteristics for this part

Specification	IR2127STRPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	12 V

Part	Logic Voltage - VIL, VIH	Voltage - Supply [Min]	Voltage - Supply [Max]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Max]	Operating Temperature [Min]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Input Type	Supplier Device Package	Package / Case	Package / Case
Infineon Technologies IR2127STRPBF	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	High-Side Low-Side	600 V	Surface Mount	Non-Inverting	8-SOIC
Infineon Technologies IR2127	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-DIP			150 °C	-40 °C	High-Side Low-Side	600 V	Through Hole	Non-Inverting	8-PDIP	0.3 in	7.62 mm
Infineon Technologies IR2127PBF	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-DIP			150 °C	-40 °C	High-Side Low-Side	600 V	Through Hole	Non-Inverting	8-PDIP	0.3 in	7.62 mm
Infineon Technologies IR2127STR	0.8 V 3 V	12 V	20 V	IGBT N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	High-Side Low-Side	600 V	Surface Mount	Non-Inverting	8-SOIC
Infineon Technologies IR2127SPBF	0.8 V 3 V	12 V	20 V	IGBT MOSFET N-Channel MOSFET	80 ns	40 ns	Single	500 mA	250 mA	1	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	High-Side Low-Side	600 V	Surface Mount	Non-Inverting	8-SOIC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

EiceDRIVER™ 600 Vhigh-side gate driver ICwith typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs.

Technical documentation and resources