Specification	SSM3J168F,LXHF

Current - Continuous Drain (Id) (Ta)	400 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	3 nC, 3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	82 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	S-Mini
Power Dissipation (Max)	600 mW
Qualification	AEC-Q101
Rds On (Max)	1.55 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-20 V
Vgs (Max) Positive	10 V
Vgs(th) (Max)	2 V

SSM3J168F Series

Part	Qualification	Vgs (Max) Negative	Vgs (Max) Positive	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Input Capacitance (Ciss) (Max)	Grade	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Package Name	Gate Charge (Max)	Technology	Rds On (Max)	Vgs(th) (Max)	Operating Temperature
Toshiba Semiconductor and Storage SSM3J168F,LXHF	AEC-Q101	-20 V	10 V	600 mW	400 mA	P-Channel	4 V	10 V	82 pF	Automotive	60 V	Surface Mount	SC-59 SOT-23-3 TO-236-3	S-Mini	3 nC 3 nC	MOSFET (Metal Oxide)	1.55 Ohm	2 V	150 °C
Toshiba Semiconductor and Storage SSM3J168F,LF		-16 V	20 V	1.2 W	400 mA	P-Channel	4 V	10 V	82 pF		60 V	Surface Mount	SC-59 SOT-23-3 TO-236-3	SOT-23-3	3 nC 3 nC	MOSFET (Metal Oxide)	1.9 Ohm	2 V	150 °C

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