MOSFET P-CH 60V 400MA S-MINI
| Part | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4 V | 10 V | SC-59 SOT-23-3 TO-236-3 | -16 V 20 V | 3 nC | 150 °C | 1.2 W | 400 mA | MOSFET (Metal Oxide) | Surface Mount | SOT-23-3 | 82 pF | 1.9 Ohm | P-Channel | 60 V | 2 V |