SSM3J168F,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 400MA S-MINI

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 400MA S-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J168F,LF

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3 nC
Input Capacitance (Ciss) (Max) @ Vds	82 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	1.9 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM3J168F,LF	4 V	10 V	SC-59 SOT-23-3 TO-236-3	-16 V 20 V	3 nC	150 °C	1.2 W	400 mA	MOSFET (Metal Oxide)	Surface Mount	SOT-23-3	82 pF	1.9 Ohm	P-Channel	60 V	2 V

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General part information

P-Channel 60 V 400mA (Ta) 1.2W (Ta) Surface Mount SOT-23-3

Technical documentation and resources

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