STB26NM60N

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STMicroelectronics

N-CHANNEL 600 V, 0.135 OHM TYP., 20 A MDMESH II POWER MOSFET IN D2PAK PACKAGE

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Documents AN4337 +18

STB26NM60N

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STMicroelectronics

N-CHANNEL 600 V, 0.135 OHM TYP., 20 A MDMESH II POWER MOSFET IN D2PAK PACKAGE

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Documents AN4337 +18

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB26NM60N

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	165 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

STB26N60M2 Series

N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a D2PAK package

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STB26NM60N	30 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1800 pF	Surface Mount	600 V	165 mOhm	60 nC	N-Channel	20 A	140 W	TO-263 (D2PAK)	MOSFET (Metal Oxide)	10 V	150 °C
STMicroelectronics STB26N60M2	25 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1360 pF	Surface Mount	600 V	165 mOhm		N-Channel	20 A	169 W	D2PAK	MOSFET (Metal Oxide)	10 V		-55 °C	150 °C	34 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.74
		10	$ 3.91
		100	$ 3.49
	Digi-Reel®	1	$ 5.74
		10	$ 3.91
		100	$ 3.49
	Tape & Reel (TR)	1000	$ 3.49

Description

General part information

STB26N60M2 Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STB26NM60N

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STB26NM60N

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Technical Specifications

STB26N60M2 Series

Pricing

Description

STB26N60M2 Series

Documents

AN4337

UM1575

AN2344

DS6239

AN4250

TN1378

TN1224

AN2842

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AN1703

TN1225

Datasheet

Datasheet

STB26N60M2 Series