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STB26N60M2 - TN4050HP-12G2YTR

STB26N60M2

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STMicroelectronics

N-CHANNEL 600 V, 140 MOHM TYP., 20 A MDMESH M2 POWER MOSFET IN A D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENDatasheet+25
STB26N60M2 - TN4050HP-12G2YTR

STB26N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 140 MOHM TYP., 20 A MDMESH M2 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsTechnical Data Sheet ENDatasheet+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB26N60M2
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
Input Capacitance (Ciss) (Max) @ Vds1360 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)169 W
Rds On (Max) @ Id, Vgs165 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.00
10$ 2.52
100$ 2.04
500$ 1.81
Digi-Reel® 1$ 3.00
10$ 2.52
100$ 2.04
500$ 1.81
Tape & Reel (TR) 1000$ 1.46
2000$ 1.40
NewarkEach (Supplied on Cut Tape) 1$ 2.89
10$ 2.75
25$ 2.64

Description

General part information

STB26N60M2 Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.