STB26N60M2 Series

N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a D2PAK package

Catalog

N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a D2PAK package

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STB26NM60N	30 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1800 pF	Surface Mount	600 V	165 mOhm	60 nC	N-Channel	20 A	140 W	TO-263 (D2PAK)	MOSFET (Metal Oxide)	10 V	150 °C
STMicroelectronics STB26N60M2	25 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1360 pF	Surface Mount	600 V	165 mOhm		N-Channel	20 A	169 W	D2PAK	MOSFET (Metal Oxide)	10 V		-55 °C	150 °C	34 nC

Catalog

N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a D2PAK package

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.