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CSD17556Q5BT

CSD17556Q5BT

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 1.8 MOHM

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CSD17556Q5BT

CSD17556Q5BT

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 1.8 MOHM

Find alt

Description

General part information

CSD17556 Series

This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17556Q5BT
Current - Continuous Drain (Id) (Ta)100 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)39 nC
Input Capacitance (Ciss) (Max)7020 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length5 mm
Package Name8-VSON-CLIP
Package Width6 mm
Power Dissipation (Max)3.1 W, 191 W
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1.65 V

Pricing

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CAD

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