CSD17556 Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Part	Package / Case	Input Capacitance (Ciss) (Max)	Vgs (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Power Dissipation (Max)	Package Name	Package Width	Package Length	FET Type
Texas Instruments CSD17556Q5BT	8-PowerTDFN	7020 pF	20 V	Surface Mount	10 V	4.5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	39 nC	30 V	100 A	1.65 V	3.1 W 191 W	8-VSON-CLIP	6 mm	5 mm	N-Channel

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

Description

This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.