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DMN6069SFG-13 - Package Image for PowerDI3333-8

DMN6069SFG-13

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

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DMN6069SFG-13 - Package Image for PowerDI3333-8

DMN6069SFG-13

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN6069SFG-13
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds1480 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]930 mW
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.22
6000$ 0.21
9000$ 0.20
15000$ 0.19
21000$ 0.18

Description

General part information

DMN6069SFGQ Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.