DMN6069SE-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
DMN6069SE-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN6069SE-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A, 4.3 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 825 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 2.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 69 mOhm |
| Supplier Device Package | SOT-223-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.50 | |
| 10 | $ 0.43 | |||
| 100 | $ 0.30 | |||
| 500 | $ 0.23 | |||
| 1000 | $ 0.19 | |||
| Digi-Reel® | 1 | $ 0.50 | ||
| 10 | $ 0.43 | |||
| 100 | $ 0.30 | |||
| 500 | $ 0.23 | |||
| 1000 | $ 0.19 | |||
| Tape & Reel (TR) | 2500 | $ 0.17 | ||
| 5000 | $ 0.16 | |||
| 12500 | $ 0.15 | |||
| 25000 | $ 0.15 | |||
Description
General part information
DMN6069SFGQ Series
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources