DMN6069SFGQ Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Grade	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	FET Type	Power Dissipation (Max) [Max]
Diodes Inc DMN6069SE-13	3 V	69 mOhm	SOT-223-3	825 pF	16 nC	AEC-Q101	TO-261-4 TO-261AA	-55 °C	150 °C	4.3 A 10 A	4.5 V 10 V	MOSFET (Metal Oxide)	Automotive	60 V	20 V	2.2 W	Surface Mount	N-Channel
Diodes Inc DMN6069SFG-13	3 V	50 mOhm	POWERDI3333-8	1480 pF	25 nC		8-PowerVDFN	-55 °C	150 °C		4.5 V 10 V	MOSFET (Metal Oxide)		60 V	20 V		Surface Mount	N-Channel	930 mW
Diodes Inc DMN6069SFGQ-7	3 V	50 mOhm	POWERDI3333-8	1480 pF	25 nC		8-PowerVDFN	-55 °C	150 °C	18 A	4.5 V 10 V	MOSFET (Metal Oxide)		60 V	20 V		Surface Mount	N-Channel
Diodes Inc DMN6069SFGQ-13	3 V	50 mOhm	POWERDI3333-8	1480 pF	25 nC		8-PowerVDFN	-55 °C	150 °C	18 A	4.5 V 10 V	MOSFET (Metal Oxide)		60 V	20 V		Surface Mount	N-Channel

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Fast Switching Speed

• Low On-Resistance

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

• An automotive-compliant part is available under separate datasheet (DMN6069SEQ)

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.