IRF3710PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 57 A, 0.023 OHM, TO-220AB, THROUGH HOLE

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IRF3710PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 57 A, 0.023 OHM, TO-220AB, THROUGH HOLE

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Technical Specifications

Parameters and characteristics for this part

Specification	IRF3710PBF

Current - Continuous Drain (Id) @ 25°C	57 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	3130 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF3710 Series

Part	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Power Dissipation (Max)
Infineon Technologies IRF3710ZSTRLPBF	MOSFET (Metal Oxide)	18 mOhm	D2PAK	N-Channel	100 V	-55 °C	175 ░C	2900 pF	10 V	59 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 nC	4 V	Surface Mount	20 V
Infineon Technologies IRF3710ZPBF	MOSFET (Metal Oxide)	18 mOhm	TO-220AB	N-Channel	100 V	-55 °C	175 ░C	2900 pF	10 V	59 A	TO-220-3	120 nC	4 V	Through Hole	20 V
Infineon Technologies IRF3710STRLPBF	MOSFET (Metal Oxide)	23 mOhm	D2PAK	N-Channel	100 V	-55 °C	175 ░C	3130 pF	10 V	57 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC	4 V	Surface Mount	20 V	200 W
Infineon Technologies IRF3710PBF	MOSFET (Metal Oxide)	23 mOhm	TO-220AB	N-Channel	100 V	-55 °C	175 ░C	3130 pF	10 V	57 A	TO-220-3	130 nC	4 V	Through Hole	20 V	200 W
Infineon Technologies IRF3710STRRPBF	MOSFET (Metal Oxide)	23 mOhm	D2PAK	N-Channel	100 V	-55 °C	175 ░C	3130 pF	10 V	57 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC	4 V	Surface Mount	20 V	200 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.37
		10	$ 1.52
		100	$ 1.04
		500	$ 0.83
		1000	$ 0.77
		2000	$ 0.71
		5000	$ 0.68

Description

General part information

IRF3710 Series

The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Documents

Technical documentation and resources