IRF3710STRRPBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 23 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet IR Part Numbering System

IRF3710STRRPBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 23 MOHM;

Deep-Dive with AI

DocumentsDatasheet IR Part Numbering System

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF3710STRRPBF

Current - Continuous Drain (Id) @ 25°C	57 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	3130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF3710 Series

Part	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Power Dissipation (Max)
Infineon Technologies IRF3710ZSTRLPBF	MOSFET (Metal Oxide)	18 mOhm	D2PAK	N-Channel	100 V	-55 °C	175 ░C	2900 pF	10 V	59 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 nC	4 V	Surface Mount	20 V
Infineon Technologies IRF3710ZPBF	MOSFET (Metal Oxide)	18 mOhm	TO-220AB	N-Channel	100 V	-55 °C	175 ░C	2900 pF	10 V	59 A	TO-220-3	120 nC	4 V	Through Hole	20 V
Infineon Technologies IRF3710STRLPBF	MOSFET (Metal Oxide)	23 mOhm	D2PAK	N-Channel	100 V	-55 °C	175 ░C	3130 pF	10 V	57 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC	4 V	Surface Mount	20 V	200 W
Infineon Technologies IRF3710PBF	MOSFET (Metal Oxide)	23 mOhm	TO-220AB	N-Channel	100 V	-55 °C	175 ░C	3130 pF	10 V	57 A	TO-220-3	130 nC	4 V	Through Hole	20 V	200 W
Infineon Technologies IRF3710STRRPBF	MOSFET (Metal Oxide)	23 mOhm	D2PAK	N-Channel	100 V	-55 °C	175 ░C	3130 pF	10 V	57 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC	4 V	Surface Mount	20 V	200 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IRF3710 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Documents

Technical documentation and resources