IRF3710 Series

Catalog

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 18 MOHM;

Part	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Power Dissipation (Max)
Infineon Technologies IRF3710ZSTRLPBF	MOSFET (Metal Oxide)	18 mOhm	D2PAK	N-Channel	100 V	-55 °C	175 ░C	2900 pF	10 V	59 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 nC	4 V	Surface Mount	20 V
Infineon Technologies IRF3710ZPBF	MOSFET (Metal Oxide)	18 mOhm	TO-220AB	N-Channel	100 V	-55 °C	175 ░C	2900 pF	10 V	59 A	TO-220-3	120 nC	4 V	Through Hole	20 V
Infineon Technologies IRF3710STRLPBF	MOSFET (Metal Oxide)	23 mOhm	D2PAK	N-Channel	100 V	-55 °C	175 ░C	3130 pF	10 V	57 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC	4 V	Surface Mount	20 V	200 W
Infineon Technologies IRF3710PBF	MOSFET (Metal Oxide)	23 mOhm	TO-220AB	N-Channel	100 V	-55 °C	175 ░C	3130 pF	10 V	57 A	TO-220-3	130 nC	4 V	Through Hole	20 V	200 W
Infineon Technologies IRF3710STRRPBF	MOSFET (Metal Oxide)	23 mOhm	D2PAK	N-Channel	100 V	-55 °C	175 ░C	3130 pF	10 V	57 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC	4 V	Surface Mount	20 V	200 W