IPP076N15N5AKSA1
UnknownOPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; TO-220 PACKAGE; 7.6 MOHM;
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IPP076N15N5AKSA1
UnknownOPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; TO-220 PACKAGE; 7.6 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP076N15N5AKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 112 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 21 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 214 W |
| Rds On (Max) @ Id, Vgs | 7.6 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPP076 Series
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on)(up to 25 percent compared to the next best alternative in SuperSO8) and Qrrwithout compromising FOMgdand FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Qrr= 26 nC in SuperSO8) increases commutation ruggedness.
Documents
Technical documentation and resources