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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; TO-220 PACKAGE; 7.6 MOHM;
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Supplier Device Package | FET Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 188 W | 10 V | Through Hole | 100 A | 7.6 mOhm | PG-TO220-3 | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 101 nC | 4 V | 20 V | TO-220-3 | 6640 pF | 120 V | |
Infineon Technologies | 214 W | 8 V 10 V | Through Hole | 112 A | 7.6 mOhm | PG-TO220-3 | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 21 nC | 4.6 V | 20 V | TO-220-3 | 150 V | 4700 pF |