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IPP076N12N3GXKSA1 - TO-220-3

IPP076N12N3GXKSA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; TO-220 PACKAGE; 7.6 MOHM;

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IPP076N12N3GXKSA1 - TO-220-3

IPP076N12N3GXKSA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; TO-220 PACKAGE; 7.6 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP076N12N3GXKSA1
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]101 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6640 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)188 W
Rds On (Max) @ Id, Vgs7.6 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.96
10$ 2.61
100$ 1.83
500$ 1.50
1000$ 1.40
2000$ 1.38
NewarkEach 1$ 4.21
10$ 3.83
100$ 3.14
500$ 2.82
1000$ 2.46
2500$ 2.13
5000$ 2.04

Description

General part information

IPP076 Series

The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.

Documents

Technical documentation and resources

No documents available