Specification	IR2125S

Channel Type	Single
Current - Peak Output (Sink)	3.3 A
Current - Peak Output (Source)	1.6 A
Driven Configuration	High-Side
Fall Time (Typ)	26 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	500 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.2 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.295 in
Package Name	16-SOIC
Package Width	7.5 mm
Rise Time (Typ)	43 ns
Voltage - Supply (Maximum)	18 V
Voltage - Supply (Minimum)	0 V

IR2125 Series

Part	Gate Type	Rise Time (Typ)	Fall Time (Typ)	Voltage - Supply (Maximum)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Channel Type	Gate Channel	Input Type	Package Length	Package Name	Package Width	Current - Peak Output (Sink)	Current - Peak Output (Source)	Driven Configuration	Logic Voltage - VIL	Logic Voltage - VIH	High Side Voltage - Max (Bootstrap)	Number of Drivers
INFINEON IR2125	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	N-Channel	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125PBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	N-Channel	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125STRPBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125S	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125SPBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125SPBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125STR	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1

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