IR2125PBF

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INFINEON

THE IR2125 IS A 500 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING

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IR2125PBF

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INFINEON

THE IR2125 IS A 500 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2125 Series

The IR2125PBF is a 1-channel high voltage high speed power MOSFET and IGBT Driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 500V.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2125PBF

Channel Type	Single
Current - Peak Output (Sink)	3.3 A
Current - Peak Output (Source)	1.6 A
Driven Configuration	High-Side
Fall Time (Typ)	26 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	500 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.2 V
Logic Voltage - VIL	0.8 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-PDIP, 8-DIP
Package Width	7.62 mm
Rise Time (Typ)	43 ns
Voltage - Supply (Maximum)	18 V
Voltage - Supply (Minimum)	0 V

IR2125 Series

Part	Gate Type	Rise Time (Typ)	Fall Time (Typ)	Voltage - Supply (Maximum)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Channel Type	Gate Channel	Input Type	Package Length	Package Name	Package Width	Current - Peak Output (Sink)	Current - Peak Output (Source)	Driven Configuration	Logic Voltage - VIL	Logic Voltage - VIH	High Side Voltage - Max (Bootstrap)	Number of Drivers
INFINEON IR2125	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	N-Channel	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125PBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	N-Channel	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125STRPBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125S	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125SPBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125SPBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125STR	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

Application Note EN

Datasheet