IR2125 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HIGH-SIDE 8DIP

Part	Gate Type	Rise Time (Typ)	Fall Time (Typ)	Voltage - Supply (Maximum)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Channel Type	Gate Channel	Input Type	Package Length	Package Name	Package Width	Current - Peak Output (Sink)	Current - Peak Output (Source)	Driven Configuration	Logic Voltage - VIL	Logic Voltage - VIH	High Side Voltage - Max (Bootstrap)	Number of Drivers
INFINEON IR2125	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	N-Channel	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125PBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Through Hole	Single	N-Channel	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125STRPBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125S	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125SPBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125SPBF	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1
INFINEON IR2125STR	IGBT MOSFET N-Channel MOSFET	43 ns	26 ns	18 V	-40 °C	150 °C	Surface Mount	Single	N-Channel	Non-Inverting	0.295 in	16-SOIC	7.5 mm	3.3 A	1.6 A	High-Side	0.8 V	2.2 V	500 V	1