Specification	TSM110NB04LCR RLG

Current - Continuous Drain (Id) (Ta)	12 A
Current - Continuous Drain (Id) (Tc)	54 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	1269 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerLDFN
Package Length	5.2 mm
Package Name	8-PDFN
Package Width	5.75 mm
Power Dissipation (Max)	3.1 W, 68 W
Rds On (Max)	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

TSM110 Series

Part	Package / Case	Vgs (Max)	Vgs(th) (Max)	Package Name	Package Length	Package Width	Input Capacitance (Ciss) (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power - Max (Ta)	Power - Max (Tc)	Channel Count	Configuration	Configuration - Features
Taiwan Semiconductor Corporation TSM110NB04CR RLG	8-PowerLDFN	20 V	4 V	8-PDFN	5.2 mm	5.75 mm	1443 pF	Surface Mount	MOSFET (Metal Oxide)	40 V	N-Channel	3.1 W 68 W	-55 °C	175 °C	23 nC	12 A	54 A	11 mOhm	10 V
Taiwan Semiconductor Corporation TSM110NB04LCR RLG	8-PowerLDFN	20 V	2.5 V	8-PDFN	5.2 mm	5.75 mm	1269 pF	Surface Mount	MOSFET (Metal Oxide)	40 V	N-Channel	3.1 W 68 W	-55 °C	175 °C	23 nC	12 A	54 A	11 mOhm		10 V	4.5 V
Taiwan Semiconductor Corporation TSM110NB04DCR RLG	8-PowerTDFN		4 V	8-PDFN	5 mm	6 mm	1506 pF	Surface Mount	MOSFET (Metal Oxide)	40 V			-55 °C	155 °C	25 nC	10 A	48 A	11 mOhm				2 W	48 W	2	N-Channel	Dual
Taiwan Semiconductor Corporation TSM110NB04LDCR RLG	8-PowerTDFN		2.5 V	8-PDFN	5 mm	6 mm	1269 pF	Surface Mount	MOSFET (Metal Oxide)	40 V			-55 °C	150 °C	23 nC	10 A	48 A	11 mOhm				2 W	48 W	2	N-Channel	Dual

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